IF1801 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-33
IF1801
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings = T_A at 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
300 mW
2 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
IF1801
Min Max Unit
Process NJ1800DL
Test Conditions
– 20
V I_G = – 1 µA, V_DS = ØV
– 0.1 nA V_GS = – 10V, V_DS = ØV
– 0.35 – 2
30
V V_DS = 10V, I_D = 0.5 nA
mA V_DS = 10V, V_GS = ØV
g_fs
50
mS V_DS = 10V, I_D = 5 mA
f = 1 kHz
C_iss
100 pF V_DS = 10V, I_D = 5 mA
f = 1 MHz
C_rss
50 pF V_DS = 10V, I_D = 5 mA
f = 1 MHz
Typ
e¯_N
0.5
nV/√Hz V_DG = 4V, I_D = 5 mA
f = 1 kHz
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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