IF142 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS
V_GS(F)
I_DSS
Y_fs
Y_os
C_iss
C_rss
e¯_N
IF142
Min Max Unit
Process NJ14AL
Test Conditions
– 25
V I_G = – 1 µA, V_DS = ØV
– 0.1 nA V_GS = – 15V, V_DS = ØV
– 0.2 nA V_GS = – 15V, V_DS = ØV
–6
V V_DS = 15V, I_D = 5 nA
–5
V V_DS = 15V, I_D = 50 µA
1
V V_DS = Ø, I_G = 1 mA
5
15 mA V_DS = 15V, V_GS = ØV
T_A = 150°C
3.5
mS V_DS = 15V, V_GS = ØV
0.05 µS V_DS = 15V, V_GS = ØV
3
pF V_DS = 15V, V_GS = ØV
0.6 pF V_DS = 15V, V_GS = ØV
Typ
4
nV/√Hz V_DS = 12V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
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