IF140 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

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01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain
Amplifiers
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V_(BR)GSS
Gate Reverse Current
I_GSS
Gate Source Cutoff Voltage
Gate Source Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V_GS(OFF)
V_GS
V_GS(F)
I_DSS
Dynamic Electrical Characteristics
Common Source Forward Transmittance Y_fs
Common Source Output Conductance Y_os
Common Source Input Capacitance
C_iss
Common Source Reverse
Transfer Capacitance
C_rss
IF140
IF140A
Min Max Min Max Unit
– 20
– 20
V
– 0.1
– 0.1 nA
– 0.2
– 0.2 nA
–6
–6 V
– 5 – 2.5 – 6 V
1
1V
5 15 5 15 mA
4.5
4.5
mS
0.05
0.05 µS
3
3 pF
0.6
0.6 pF
Process NJ14AL
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 15V, I_D = 5 nA
V_DS = 15V, I_D = 50 µA
V_DS = Ø, I_G = 1 mA
V_DS = 15V, V_GS = ØV
T_A = 150°C
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Typ
Typ
Equivalent Short Circuit
Input Noise Voltage
e¯_N
4
4
nV/√Hz V_DS = 12V, V_GS = ØV
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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