2N6550 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at T_A =25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to +200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V_(BR)GSS
Gate Leakage Current
I_GSS
Zero Gate Voltage Drain Current (Pulsed)
Gate Source Cutoff Voltage
I_DSS
V_GS(OFF)
Dynamic Electrical Characteristics
Transconductance
g_fs
Common Source Output Conductance |Y_os|
Common Source Input Capacitance
C_iss
Common Source Reverse Transfer Capacitance C_rss
Equivalent Short Circuit
Input Noise Voltage
e¯_N
e¯_N Total
Equivalent Open Circuit Input Noise Current ^¯i_N
2N6550
Min Typ Max
– 20
–3
– 0.1
10 100 250
– 0.3
–3
Process NJ450L
Unit
Test Conditions
V I_G = 10 µA, V_DS = ØV
nA V_GS = – 10V, V_DS = ØV
µA V_GS = – 10V, V_DS = ØV
mA V_DS = 10V, V_GS = Ø V
V V_DS = 10V, I_D = 0.1 mA
T_A = 85°C
25
150 mS V_DS = 10V, I_D = 10 mA
150 µS V_DS = 10V, I_D = 10 mA
30
35
pF V_DS = 10V, I_D = 10 mA
10
20
pF V_DS = 10V, V_DS = ØV
1.4
2 nV/√Hz V_DS = 5V, I_D = 10 mA
6
10 ^{nV/√Hz V}DS ^{= 5V, I}D ^{= 10 mA}
0.4
0.6 µVrms V_DS = 5V, I_D = 10 mA
0.1
pA/√Hz R_S < 100 KΩ
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
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