2N6453 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

B-26
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T_A = 25¡C
2N6453 2N6454
Reverse Gate Source Voltage
– 20 V – 25 V
Reverse Gate Drain Voltage
– 20 V – 25 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
360 mW 360 mW
Power Derating
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
2N6453 2N6454
Min Max Min Max Unit
V_(BR)GSS – 20
– 25
V
– 0.1
nA
– 0.5 nA
I_GSS
– 0.2
µA
– 1 µA
V_GS(OFF) – 0.75 – 5 – 0.75 – 5 V
I_DSS
15 50 15 50 mA
Process NJ132L
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 10V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 10V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 10V, I_D = 0.5 nA
V_DS = 10V, V_GS = ØV
T_A = 125°C
T_A = 125°C
| Y_fs |
| Y_os |
C_iss
C_rss
e¯_N
NF
mS V_DS = 10V, I_D = 5 mA
20 40 20 40 mS V_DS = 10V, I_D = 15 mA
µS V_DS = 10V, I_D = 5 mA
100
100 µS V_DS = 10V, I_D = 15 mA
pF V_DS = 10V, I_D = 5 mA
25
25 pF V_DS = 10V, I_D = 15 mA
pF V_DS = 10V, I_D = 5 mA
5
5 pF V_DS = 10V, I_D = 15 mA
5
10 nV/√Hz V_DS = 10V, I_D = 5 mA
3
8 nV/√Hz V_DS = 10V, I_D = 5 mA
1.5
2.5 dB
V_DS = 10V, ^I_D ^{= 5 mA}
R_G = 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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