2N6451 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T_A = 25¡C
2N6451 2N6452
Reverse Gate Source Voltage
– 20 V – 25 V
Reverse Gate Drain Voltage
– 20 V – 25 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
360 mW 360 mW
Power Derating
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
2N6451 2N6452
Min Max Min Max Unit
– 20
– 25
V
– 0.1
nA
– 0.5 nA
– 0.2
µA
– 1 µA
– 0.5 – 3.5 – 0.5 – 3.5 V
5 20 5 20 mA
Process NJ132L
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 10V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 10V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 10V, I_D = 0.5 nA
V_DS = 10V, V_GS = ØV
T_A = 125°C
T_A = 125°C
| Y_fs |
| Y_os |
C_iss
C_rss
e¯_N
NF
15 30 15 30 mS V_DS = 10V, I_D = 5 mA
mS V_DS = 10V, I_D = 15 mA
50
50 µS V_DS = 10V, I_D = 5 mA
µS V_DS = 10V, I_D = 15 mA
25
25 pF V_DS = 10V, I_D = 5 mA
pF V_DS = 10V, I_D = 15 mA
5
5 pF V_DS = 10V, I_D = 5 mA
pF V_DS = 10V, I_D = 15 mA
5
10 nV/√Hz V_DS = 10V, I_D = 5 mA
3
8 nV/√Hz V_DS = 10V, I_D = 5 mA
1.5
2.5 dB
V_DS = 10V, ^I_D ^{= 5 mA}
R_G = 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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