2N6449 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
Â¥ High Voltage
Absolute maximum ratings at T_A = 25¡C
2N6449 2N6450
Reverse Gate Source Voltage
– 300 V – 200 V
Reverse Gate Drain Voltage
– 300 V – 200 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
800 mW 800 mW
Power Derating
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Admittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
2N6449 2N6450
Min Max Min Max Unit
– 300
– 200
V
– 100
nA
– 100 nA
– 100
µA
– 100 µA
– 2 – 15 – 2 – 15 V
2 10 2 10 mA
Y_fs
0.5 3 0.5 3 mS
Y_os
100
100 µS
C_iss
20
20 pF
C_rss
2.5
2.5 pF
Process NJ42
Test Conditions
I_G = – 10 µA, V_DS = ØV
V_GS = – 150V, V_DS = ØV
V_GS = – 100V, V_DS = ØV
V_GS = – 150V, V_DS = ØV
V_GS = – 100V, V_DS = ØV
V_DS = 30V, I_D = 4 nA
V_DS = 30V, V_GS = ØV
T_A = 150°C
T_A = 150°C
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ39 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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