2N5912 Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems replaces discontinued Siliconix & National

01/99
B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Â¥ Wideband Differential
Amplifiers
Absolute maximum ratings at T_A = 25¡C
Continuous Forward Gate Current
50 mA
Total Device Power Dissipation
500 mW
Power Derating
4 mW°C
Storage Temperature Range
–65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
V_(BR)GSS
I_GSS
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
I_G
V_GS(OFF)
V_GS
I_DSS
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g_fs
Common Source
Output Conductance
g_os
Common Source Input Capacitance
C_iss
Common Source
Reverse Transfer Capacitance
C_rss
Equivalent Short Circuit Input Noise Voltage e¯_N
Noise Figure
NF
2N5911
2N5912
Min Max Min Max Unit
– 25
– 25
V
– 100
– 100 pA
– 250
– 250 nA
– 100
– 100 pA
– 100
– 100 nA
–1 –5 –1 –5 V
– 0.3 – 4 – 0.3 – 4 V
7 40 7 40 mA
5000 10000 5000 10000 µS
5000 10000 5000 10000 µS
100
100 µS
150
150 µS
5
5 pF
1.2
1.2 pF
20
20 nV/√Hz
1
1 dB
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Gate Source Voltage
Differential Drift
I_G1 – I_G2
20
20 nA
I_DSS1 / I_DSS2 0.95 1 0.95 1
| V_GS1 – V_GS2 |
10
15 mV
20
∆V_GS1– V_GS2
∆T
20
40 mV
40 mV
Transconductance Ratio
g_fs1 / g_fs2
0.9 1 0.85 1
Process NJ30L or NJ36D
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DS = 10V, I_D = 1 nA
V_DS = 10V, I_D = 5 mA
V_DS = 10V, V_GS = ØV
T_A = 150°C
T_A = 125°C
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
R_G = 100 KΩ
V_DG = 10V, I_D = 5 mA
V_DG = 20V, V_GS = ØV
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
f = 1 MHz
f = 10 kHz
f = 10 kHz
T_A = 125°C
T_A = 25°C,
T_B = 125°C
T_A = – 55°C,
T_B = 25°C
f = 1 kHz
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
Surface Mount
SMP5911, SMP5912
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