2N5460 Datasheet, PDF (1/1 Pages) Motorola, Inc – CASE 2904, STYLE 7 TO92 (TO226AA)

01/99
Â¥ Audio Amplifiers
Â¥ General Purpose
Amplifiers
B-21
2N5460, 2N5461, 2N5462
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
40 V
– 10 mA
310 mW
2.8 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Forward Transadmittance
Common Source Output Admittance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS
I_DSS
r_ds(on)
| Y_fs |
| Y_os |
C_iss
C_rss
e¯_N
NF
2N5460
2N5461
2N5462
Min Max Min Max Min Max Unit
40
40
40
V
5
5
5 nA
1
1
1 µA
0.75 6 1 7.5 1.8 9 V
0.8 4.5
V
0.8 4.5
V
1.5 6 V
– 1 – 5 – 2 – 9 – 4 – 16 mA
Process PJ32
Test Conditions
I_G = 10µA, V_DS = ØV
V_GS = 20V, V_DS = ØV
V_GS = 20V, V_DS = ØV
V_DS = – 15V, I_D = – 1 µA
V_DS = – 15V, I_D = – 100 µA
V_DS = – 15V, I_D = – 200 µA
V_DS = – 15V, I_D = – 400 µA
V_DS = – 15V, V_GS = ØV
T_A = 100°C
2
0.8
0.4 kΩ
V_GS = ØV, I_D = Ø A
1
4 1.5 5
2
6 mS
V_DS = – 15V, V_GS = Ø V
75
75
75 µS
V_DS = – 15V, V_GS = Ø V
7
7
7 pF
V_DS = – 15V, V_GS = ØV
2
2
2 pF
V_DS = – 15V, V_GS = ØV
2.5
2.5
2.5 dB
V_DS = – 15V, V_GS = ØV
115
115
115 nV/√Hz
V_DS = – 15V, V_GS = ØV,
R_G = 1MΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 100 Hz,
BW = 1 Hz
f = 100 Hz
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
Surface Mount
SMP5460, SMP5461, SMP5462
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]