2N5196 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals

8/2014
2N5196, 2N5197, 2N5198, 2N5199
N-Channel Dual Silicon Junction Field-Effect Transistor
∙ Differencial Inputs
At 25^oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage V_(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current
(pulsed)
I_GSS
V_GS(OFF)
I_DSS
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
gfs
Common-Source Input
Capacitance
C_iss
Common-Source Reverse
Transfer Capacitance
C_rss
Equivalent Short Circuit Input
Noise Voltage
~e_N
Differencial Gate-Source
Voltage
Differencial Gate Source
Voltage with Temperature
(V_GS1-V_GS2)
Δ│VGS1-VGS2│
ΔT
Absolute maximum ratings at T_A = 25^oC
Reverse Gate Source & Gate Drain Voltage -50V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2.6 mW/^oC
Storage Temperature Range
-65^oC to +150^oC
2N5196, 2N5197, 2N5198, 2N5199
Min Typ Max Unit
-50
V
Process NJ16
Test Conditions
I_G = -1 uA, V_DS = 0 V
-25
pA
V_GS = -10 V, V_DS = 0 V
-0.7
-4
V
V_DS = 10 V, V_GS = 0 V
0.7
7
mA
V_DS = 10 V, V_GS = 0 V
1
4
mS VDS = 10 V, ID = 5 mA f = 1 kHz
6
pF V_DS = -10 V, V_GS = 1 V f = 1 MHz
2
pF V_DS = 10 V, I_D = 5 mA f = 1 MHz
20
nV/√Hz V_DS = 10 V, I_D = 5 mA f = 1 kHz
2N5196
2N5197
2N5198
2N5199
Unit
Min Max Min Max Min Max Min Max s
5
5
10
15 mV
5
10
20
40
μV/°
C
Test
Conditions
V_DS = 10 V,
I_D = -10 mA
VDG = 10 V,
ID = 30 μA
Surface Mount Version:
SMP5196, SMP5197,
SMP5198, SMP5199
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
[phone] Fax [phone]
www.interfet.com