2N5020 Datasheet, PDF (1/1 Pages) InterFET Corporation – P-Channel Silicon Junction Field-Effect Transistor

B-18
01/99
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
Â¥ Analog Switches
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
500 mW
Power Derating
4 mW/°C
Storage Temperature Range
– 65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
V_(BR)GDO
I_GSS
V_GS(OFF)
I_DSS
2N5020 2N5021
Min Max Min Max Unit
25
25
V
1
1 nA
0.3 1.5 0.5 2.5 V
– 0.3 – 1.2 – 1 – 3.5 mA
g_fs
1 3.5 1.5 6 mS
g_os
20
20 µS
C_iss
25
25 pF
C_rss
7
7 pF
Process PJ32
Test Conditions
I_G = 1µA, V_DS = ØV
V_GS = 15V, V_DS = ØV
V_DS = – 15V, I_D = 1 nA
V_DS = – 15V, V_GS = ØV
V_DS = – 15V, V_GS = ØV
V_DS = – 15V, V_GS = ØV
V_DS = – 15V, V_GS = ØV
V_DS = – 15V, V_GS = ØV
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
Surface Mount
SMP5020, SMP5021
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