2N4867 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
300mW
Power Derating
1.7 mW/°C
Storage Temperature Range
– 65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V_(BR)GSS
Gate Reverse Current
I_GSS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V_GS(OFF)
I_DSS
Common Source Forward
Transconductance
g_fs
Common Source Output Conductance g_os
Common Source Input Capacitance C_iss
Common Source Reverse
Transfer Capacitance
C_rss
Equivalent Short Circuit
Input Noise Voltage
e¯_N
Noise Figure
NF
2N4867
2N4867A
2N4868
2N4868A
2N4869
2N4869A
Min Max Min Max Min Max Unit
– 40
– 40
– 40
V
– 0.25
– 0.25
– 0.25 nA
– 0.25
– 0.25
– 0.25 µA
– 0.7 – 2 – 1 – 3 – 1.8 – 5 V
0.4 1.2 1 3 2.5 7.5 mA
Process NJ16
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_DS = 20V, I_D = 1 µA
V_DS = 20V, V_GS = ØV
T_A = 150°C
700 2000 1000 3000 1300 4000 µS
1.5
4
10 µS
25
25
25 pF
5
5
5 pF
20
20
20 nV/√HZ
10
10
10 nV/√HZ
1
1
1 dB
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
V_DS = 20V, V_GS = ØV
f = 1 MHz
V_DS = 10V, V_GS = ØV
V_DS = 10V, V_GS = ØV
V_DS = 10V, V_GS = ØV
f = 10 Hz
f = 1 kHz
f = 1 kHz
(2N4867, 68, 69) R_G = 20 kΩ
(2N4867A, 68A, 69A) R_G = 5 kΩ
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
1000 N. Shiloh Road, Garland, TX 75042
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