2N3971 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL JFET

8/2014
2N3971, 2N3972
N-Channel Silicon Junction Field-Effect Transistor
∙ Low r_DS(on)
∙ I_D(off) < 250 pA
∙ Fast Switching
Absolute maximum ratings at T_A = 25^oC
Reverse Gate Source & Gate Drain Voltage -40V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 mW
Power Derating
1.7 mW/^oC
Storage Temperature Range
-65^oC to +150^oC
At 25^oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown
Voltage
V_(BR)GSS
Gate Reverse Current
I_GSS
2N3971
Min Max
-40
250
2N3972
Min Max
-40
250
Gate Source Cutoff Voltage
V_GS(OFF)
-2
-5 -0.5
-3
Drain Saturation Current
I_DSS
(pulsed)
Dynamic Electrical Characteristics
Drain -Source On Resistance
r_ds(on)
Common-Source Input
Capacitance
C_iss
Common-Source Reverse
Transfer Capacitance
C_rss
Turn-On Delay Time
t_d
25 75 5
30
60
100
25
25
6
6
15
40
Rise Time
Turn-Off Time
t_r
15
40
t_off
60
100
Unit
V
pA
V
mA
Process NJ132
Test Conditions
I_G = -1 uA, V_DS = 0 V
V_GS = -10 V, V_DS = 0
V
V_DS = 10 V, V_GS = 0
V
V_DS = 10 V, V_GS = 0
V
Ω
V_GS = 0 V, I_D = 0 V
f=1
kHz
pF
V_DS = -10 V, V_GS = 1 _{f = 1}
V
MHz
pF
V_DS = 10 V, I_D = 5
mA
f=1
MHz
nS
V_DD = 10 V, V_GS(on) =
0V
nS
V_DD = 10 V, V_GS(on) =
0V
nS
V_DD = 10 V, V_GS(on) =
0V
SMP3971, SMP3972
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
[phone] Fax [phone]
www.interfet.com