2N3957 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – ABSOLUTE MAXIMUM RATINGS

B-6
01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
Â¥ Low and Medium Frequency
Differential Amplifiers
Â¥ High Input Impedance
Amplifiers
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
V_(BR)GSS
I_GSS
I_G
V_GS
V_GS(OFF)
V_GS(F)
I_DSS
2N3957 2N3958
Min Max Min Max Unit
– 50
– 50
V
– 100
– 100 pA
– 500
– 500 nA
– 50
– 50 pA
– 250
– 250 nA
– 4.2
– 4.2 V
– 0.5 – 4 – 0.5 – 4 V
– 1 – 4.5 – 1 – 4.5 V
2
2V
0.5 5 0.5 5 mA
1000 3000 1000 3000 µS
g_fs
1000
1000
µS
g_os
35
35 µS
C_iss
4
4 pF
C_dgo
1.5
1.5 pF
C_rss
1.2
1.2 pF
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source
Voltage with Temperature
Transconductance Ratio
NF
0.5
0.5 dB
| I_G1 – I_G2 |
10
10 nA
I_DSS1 / I_DSS2 0.9 1 0.85 1
| V_GS1 – V_GS2 |
20
25 mV
6
∆V_GS1– V_GS2
∆T
7.5
8 mV
10 mV
g_fs1 / g_fs2 0.9 1 0.85 1
Process NJ16
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 50 µA
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 1 nA
V_DS = Ø, I_G = 1 mA
V_DS = 20V, V_GS = ØV
T_A = 125°C
T_A = 125°C
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
V_DS = 10V, I_S = ØA
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
R_G = 10 MΩ
V_DS = 20V, I_D = 200 µA
V_DS = 20V, V_GS = ØV
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 200 µA
V_DS = 20V, I_D = 200 µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
T_A = 125°C
T_A = 25°C
to – 55°C
T_A = 25°C
to 125°C
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
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