2N3821 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
Â¥ VHF Amplifiers
Â¥ Small Signal Amplifiers
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
V_(BR)GSS
I_GSS
V_GS
V_GS(OFF)
I_DSS
I_D(OFF)
2N3821 2N3822
Min Max Min Max Unit
– 50
– 50
V
– 0.1
– 0.1 nA
– 0.1
– 0.1 µA
– 0.5 – 2
V
–1 –4 V
V
–4
–6 V
0.5 2.5 2 10 mA
nA
µA
Process NJ32
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_DS = 15V, I_D = 50 µA
V_DS = 15V, I_D = 200 µA
V_DS = 15V, I_D = 400 µA
V_DS = 15V, I_D = 0.5 nA
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = – 8V
V_DS = 15V, V_GS = – 8V
T_A = 150°C
T_A = 150°C
r_ds(on)
g_fs
Ω
1500 4500 3000 6500 µS
V_GS = ØV, I_D = Ø V
V_DS = 15V, V_GS = ØV
f = 1 kHz
f = 1 kHz
Common Source
Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
| Y_fs |
g_os
C_iss
C_rss
1500
3000
µS
10
20 µS
6
6 pF
2
2 pF
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
e¯_N
200
200 nV/√Hz V_DS = 15V, V_GS = ØV
f = 10 Hz
NF
5
5 dB
V_DS = 15V, V_GS = ØV
R_G = 1 MΩ
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]