2N2608 Datasheet, PDF (1/1 Pages) Microsemi Corporation – P-CHANNEL J-FET

8/2014
2N2608, 2N2609
P-Channel Silicon Junction Field-Effect Transistor
∙ Low-Level Choppers
∙ Data Switches
∙ Commutators
Absolute maximum ratings at T_A = 25^oC
Reverse Gate Source & Gate Drain Voltage -30V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2 mW/^oC
Storage Temperature Range
-65^oC to +150^oC
At 25^oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown
Voltage
V_(BR)GSS
Gate Reverse Current
I_GSS
Gate Source Cutoff Voltage
V_GS(OFF)
Drain Saturation Current
I_DSS
(pulsed)
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
g_fs
Common-Source Input
Capacitance
C_iss
Common-Source Reverse
Transfer Capacitance
C_rss
Typical
Equivalent Short Circuit Input
Noise Voltage
~e_N
2N2608
Min Max
-30
10
1
4
-0.9 -4.5
1
17
5
10
2N2609
Min Max
-30
30
1
4
-2 -10
25
30
7
10
Unit
V
nA
V
mA
Process PJ32
Test Conditions
I_G = -1 uA, V_DS = 0 V
V_GS = 10 V, V_DS = 0 V
V_DS = -10 V, V_GS = 0 V
V_DS = -10 V, V_GS = 0 V
mS
V_DS = -10 V, V_GS = 0 V
f=1
kHz
pF
V_DS = -10 V, V_GS = 1 V _{f = 1}
MHz
pF
V_DS = 10 V, I_D = 5 mA
f=1
MHz
nV/√Hz V_DS = 10 V, I_D = 5 mA
f=1
kHz
SMP2608, SMP2609
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
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www.interfet.com