28F002BV-B Datasheet, PDF (53/55 Pages) Intel Corporation – 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

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2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.15 Erase and Program Timings—Extended Temperature
TA = –40 °C to +85 °C
VPP
VCC
Parameter
5 V ± 10%
12 V ± 5%
3.3 ± 0.3 V 5 V ± 10% 3.3 ± 0.3 V 5 V ± 10%
Typ Max Typ Max Typ Max Typ Max Unit
Boot/Parameter Block Erase Time 0.84 7 0.8 7 0.44 7 0.34 7
s
Main Block Erase Time
2.4 14 1.9 14 1.3 14 1.1 14
s
Main Block Program Time (Byte)
1.7
1.4
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
µs
Word Program Time
13
13
8
8
µs
NOTES:
1. All numbers are sampled, not 100% tested.
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using
VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
4. Contact your Intel representative for information regarding maximum byte/word program specifications.
SEE NEW DESIGN RECOMMENDATIONS
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