28F016SV Datasheet, PDF (49/63 Pages) Intel Corporation – 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY

E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations⁽¹⁾
V_CC = 3.3V ± 0.3V, T_A = 0°C +70°C, –40°C +85°C
Temp
Commercial
Extended
Commercial
Sym
Parameter
Speed
–80
–100
–120
Unit
Notes Min Typ Max Min Typ Max Min Typ Max
t_AVAV Write Cycle Time
80
100
120
ns
t_VPEH1,2 V_PP Setup to CE#
3,7
100
100
100
ns
Going High
t_PHWL RP# Setup to WE#
3
480
480
480
ns
Going Low
t_WLEL
WE# Setup to CE#
3,7
0
Going Low
0
0
ns
t_AVEH Address Setup to
2,6,7 60
70
75
ns
CE# Going High
t_DVEH Data Setup to CE# 2,6,7
60
70
75
ns
Going High
tELEH
CE# Pulse Width
7
65
70
75
ns
t_EHDX Data Hold from CE# 2,7
10
10
10
ns
High
t_EHAX Address Hold from
2,7
10
30
10
ns
CE# High
t_EHWH WE# hold from CE#
3
5
High
0
10
ns
t_EHEL
CE# Pulse Width
High
7
15
100 45
ns
t_GHEL
Read Recovery
before Write
3
0
0
0
ns
t_EHRL
t_RHPL
t_PHEL
t_EHGL
CE# High to
3,7
RY/BY# Going Low
RP# Hold from
3
Valid Status
Register (CSR,
GSR, BSR) Data
and RY/BY# High
RP# High Recovery 3,7
to CE# Going Low
Write Recovery
before Read
0
0.480
55
100 1
75
0
100 ns
0
ns
1
µs
95
ns
49