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28F400BV-TB Datasheet, PDF (38/57 Pages) Intel Corporation – 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT SmartVoltage BOOT BLOCK FAMILY
E
Table 14. AC Characteristics: WE#–Controlled Write Operations (1) (Commercial) (Continued)
Prod
BV-80
BV-120
Sym
Parameter
VCC 3.3 ±0.3V (9) 5V±10%(11) 3.3 ± 0.3V(9) 5V±10%(11) Unit
Load 50 pF
100 pF
50 pF
100 pF
Notes Min Max Min Max Min Max Min Max
tAVAV
tPHWL
Write Cycle Time
RP# Setup to WE# Going
Low
150
80
180
120
ns
0.8
0.45
0.8
0.45
µs
tELWL CE# Setup to WE# Going
0
0
0
0
ns
Low
tPHHWH Boot Block Lock Setup to 6,8 200
100
200
100
ns
WE# Going High
tVPWH
VPP Setup to WE# Going
High
5,8 200
100
200
100
ns
tAVWH Address Setup to WE#
3 120
50
150
50
ns
Going High
tDVWH Data Setup to WE# Going 4 120
50
150
50
ns
High
tWLWH WE# Pulse Width
120
50
150
50
ns
tWHDX Data Hold Time from
4
0
0
0
0
ns
WE# High
tWHAX Address Hold Time from
3
0
0
0
0
ns
WE# High
tWHEH CE# Hold Time from WE#
0
0
0
0
ns
High
tWHWL WE# Pulse Width High
30
30
30
30
ns
tWHQV1 Word/Byte Program Time 2,5
6
6
6
6
µs
tWHQV2 Erase Duration (Boot)
2,5,6 0.3
0.3
0.3
0.3
s
tWHQV3 Erase Duration (Param)
2,5 0.3
0.3
0.3
0.3
s
tWHQV4 Erase Duration (Main)
2,5 0.6
0.6
0.6
0.6
s
tQVVL VPP Hold from Valid SRD 5,8
0
0
0
0
ns
tQVPH
RP# VHH Hold from Valid
SRD
6,8
0
0
0
0
ns
tPHBR Boot-Block Lock Delay
7,8
200
100
200
100 ns
38
PRELIMINARY