80C251SB16 Datasheet, PDF (35/36 Pages) Intel Corporation – HIGH-PERFORMANCE CHMOS MICROCONTROLLER

8XC251SA/SB/SP/SQ HIGH-PERFORMANCE CHMOS MICROCONTROLLER
T_AVQV
T_ELQV
T_EHQZ
T_GHGL
Table 18. Nonvolatile Memory Programming and Verification Characteristics at
T_A = 21 – 27 °C, V_CC = 5 V, and V_SS = 0 V(Continued)
Address to Data Valid
48T_OSC
ENABLE Low to Data Valid
48T_OSC
Data Float after ENABLE
0
48T_OSC
PROG# High to PROG# Low
10
µs
8.0 ERRATA
There are no known errata for this product.
9.0 REVISION HISTORY
This (-003) revision of the 8XC251SA/SB/SP/SQ
datasheet contains information on products with
“[M] [C] '94 '95 C” as the last line of the topside
marking. This datasheet replaces earlier product
information. The following changes appear in the -
003 datasheet:
1. Real-time wait state operation is described in
the datasheet.
2. Memory map reserved locations are newly
defined and the Memory Map is now referred
to as the “Address Map.”
3. AC Characteristics have been updated. The
following AC parameters have changed: T_LLAX,
T_RLRH, T_WLWH, T_LLRL, T_RLDV, T_RHDZ1, T_RHDZ2, T_RHLH2,
T_WHLH, T_AVDV1, T_AVDV2, T_AVRL, T_AVWL1, T_AVWL2,
T_QVWH, and T_WHAX.
4. DC Characteristics have been updated. The
following DC specs have changed: I_PD max, I_DL
typical, I_DL max, I_CC typical, and I_CC max.
5. An I_CC vs. Frequency graph is included.
6. Process information is no longer contained in
the datasheet.
7. The section “Programming and Verifying Non-
volatile Memory” has been deleted. See the
8XC251SA/SB/SP/SQ Embedded Microcon-
troller User’s Manual. Timing and Characteris-
tics for Programming and Verifying Nonvolatile
memory have been retained in this datasheet.
8. Signature Byte information has been deleted.
See the 8XC251SA/SB/SP/SQ Embedded
Microcontroller User’s Manual.
9. Sections in the datasheet are numbered.
10. New sections have been created to provide
better organization. These include “Nomencla-
ture,” “Pinout,” “Signals,” “Address Map,”
“Electrical Characteristics,” “Thermal Charac-
teristics,” “Nonvolatile Memory Programming
and Verification Characteristics”, “Errata,” and
“Revision History”
11. Proliferation Options and Package Options are
in the Nomenclature section.
12. Temperature range is contained in the Electri-
cal Characteristics section under “Operating
Conditions”
13. Bus timing diagrams have been organized into
subsections.
The (-002) revision of the 8XC251SA/SB/SP/SQ
datasheet contains information on products with
“[M] [C] '94 '95 B” as the last line of the topside
marking. This datasheet replaces earlier product
information. The following changes appear in the -
002 datasheet:
1. A corrected PDIP diagram appears on page 7.
2. A corrected formula to calculate T_LHLL is
described on page 17.
3. The RD#/PSEN# waveform is changed in Fig-
ure 11 on page 25.
PRELIMINARY
35