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PA28F400B5T80 Datasheet, PDF (30/44 Pages) Intel Corporation – 5 VOLT BOOT BLOCK FLASH MEMORY
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28F200B5, 28F004/400B5, 28F800B5
E
5.5 DC Characteristics—Automotive Temperature (Continued)
Sym
ICCR
Parameter
VCC Read Current for
Word or Byte
Notes Min
1,5,6
ICCW VCC Program Current for 1,4
Word or Byte
ICCE
VCC Erase Current
1,4
ICCES VCC Erase Suspend
1,2
Current
IPPS
VPP Standby Current
1
IPPD
VPP Deep Power-Down
1
Current
IPPR
VPP Read Current
1
IPPW VPP Program Current for
1
Word or Byte
Typ Max Unit
Test Conditions
55
70 mA
TTL
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
50
70 mA
CMOS
VCC = VCC Max
CE = VIL
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = GND ± 0.2 V
or VCC ± 0.2 V
25
50 mA VPP = VPPH1 (at 5 V)
Program in Progress
20
45 mA VPP = VPPH2 (at 12 V)
Program in Progress
22
45 mA VPP = VPPH1 (at 5 V)
Block Erase in Progress
18
40 mA VPP = VPPH2 (at 12 V)
Block Erase in Progress
5
12.0 mA CE# = VIH
Block Erase Suspend
VPP = VPPH1 (at 5 V)
± 5 ± 15 µA VPP ≤ VCC
0.2 10 µA RP# = GND ± 0.2 V
50
200 µA VPP >VCC
13
30
mA VPP = VPPH
VPP = VPPH1 (at 5 V)
Program in Progress
8
25
mA VPP = VPPH
VPP = VPPH2 (at 12 V)
Program in Progress
30
PRELIMINARY
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