28F002BC Datasheet, PDF (27/37 Pages) Intel Corporation – 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY

E
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
4.2.3
DC CHARACTERISTICS
Symbol
Parameter
I_IL
Input Load Current
Table 7. DC Characteristics
Notes Min Typ Max
1
± 1.0
I_LO
Output Leakage Current
1
± 10
I_CCS
V_CC Standby Current
1,3
1.5
50
100
I_CCD
I_CCR
V_CC Deep Power-Down
1
Current
V_CC Read Current
1,5
0.2
8.0
20
55
20
60
I_CCW
V_CC Program Current
1,4
I_CCE
V_CC Erase Current
1,4
I_CCES
V_CC Erase Suspend
Current
1,2
I_PPS
V_PP Standby Current
1
I_PPD
V_PP Deep Power-Down
1
Current
I_PPR
V_PP Read Current
1
I_PPW
V_PP Program Current
1,4
I_PPE
V_PP Erase Current
1,4
I_PPES
V_PP Erase Suspend
Current
1
PRELIMINARY
50
30
5
10
± 10
5.0
200
20
15
200
Units
µA
µA
mA
µA
µA
mA
mA
mA
Test Conditions
VCC = VCC Max
VIN = VCC or GND
VCC = VCC Max
VIN = VCC or GND
VCC = VCC Max
CE# = RP# = WP# =
VIH
VCC = VCC Max
CE# = RP# = V_CC ±
0.2V
VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2V
CMOS INPUTS
VCC = VCC Max
CE# = GND
f = 10 MHz
IOUT = 0 mA
CMOS Inputs: GND ±
0.2V or VCC ± 0.2V
TTL INPUTS
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
TTL Inputs: VIL or VIH
Byte Prog. in Progress
mA Block Erase in
Progress
mA ^{CE# = VIH}
Block Erase Suspend
µA VPP ≤ VCC
µA RP# = GND ± 0.2V
µA VPP > VCC
mA ^{VPP = VPPH}
Byte Prog. in Progress
mA ^{VPP = VPPH}
Block Erase in
Progress
µA ^{VPP = VPPH}
Block Erase
Suspended
27