28F008SA Datasheet, PDF (20/33 Pages) Intel Corporation – 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

28F008SA
DC CHARACTERISTICS (Continued)
Symbol
Parameter
Notes Min Typ Max Unit Test Condition
I_CCW
I_CCE
I_CCES
V_CC Byte Write Current
1
V_CC Block Erase Current
1
V_CC Erase Suspend Current 1 2
I_PPS
V_PP Standby Current
1
I_PPD
V_PP Deep PowerDown
1
Current
10
10
5
g1
0 10
30
30
10
g15
50
mA Byte Write In Progress
mA Block Erase In Progress
mA Block Erase Suspended
CE ^e V_IH
mA V_PP ^s V_CC
mA RP ^e GND g0 2V
I_PPR
V_PP Read Current
I_PPW V_PP Byte Write Current
1
200
mA V_PP ^l V_CC
10
30
mA V_PP ^e V_PPH
Byte Write in Progress
I_PPE
V_PP Block Erase Current
1
10
30
mA V_PP ^e V_PPH
Block Erase in Progress
I_PPES V_PP Erase Suspend
1
Current
90
200
mA V_PP ^e V_PPH
Block Erase Suspended
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
V_OH1 Output High Voltage (TTL)
V_OH2
Output High Voltage
(CMOS)
V_PPL
V_PP during Normal
Operations
b_{0 5}
20
3
3
24
0 85 V_CC
V_CC ^b 0 4
4
00
08
V
V_CC ^a 0 5 V
0 45
V V_CC ^e V_CC Min
I_OL ^e 5 8 mA
V V_CC ^e V_CC Min
I_OH ^{e b}2 5 mA
V I_OH ^{e b}2 5 mA
V_CC ^e V_CC Min
I_OH ^{e b}100 mA
V_CC ^e V_CC Min
65
V
V_PPH
V_PP during Erase Write
Operations
11 4 12 0 12 6
V
V_LKO V_CC Erase Write Lock
20
V
Voltage
20