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28F400BL-TB Datasheet, PDF (17/44 Pages) Intel Corporation – 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F400BL-T B 28F004BL-T B
Table 1 Bus Operations for WORD-WIDE Mode (BYTE e VIH)
Mode
Notes RP
CE
OE
WE
A9 A0 VPP DQ0-15
Read
12
VIH
VIL
VIL
VIH
X
X
X
DOUT
Output Disable
VIH
VIL
VIH
VIH
X
X
X High Z
Standby
VIH
VIH
X
X
X X X High Z
Deep Power-Down
9
VIL
X
X
X
X X X High Z
Intelligent Identifier (Mfr)
34
VIH
VIL
VIL
VIH VID VIL X 0089H
Intelligent Identifier (Device) 3 4 5 10 VIH
VIL
VIL
VIH VID VIH X 4470H
4471H
Write
678
VIH
VIL
VIH
VIL
XX X
DIN
Table 2 Bus Operations for BYTE-WIDE Mode (BYTE e VIL)
Mode
Notes RP CE OE WE A9 A0 A-1 VPP
Read
12
VIH VIL VIL VIH X X X X
Output Disable
VIH VIL VIH VIH X X X X
Standby
VIH VIH
X
X XXX X
Deep Power-Down
VIL
X
X
X XXX X
Intelligent Identifier 3 4
(Mfr)
VIH VIL VIL VIH VID VIL X X
Intelligent Identifier 3 4 5 10 VIH VIL VIL VIH VID VIH X X
(Device)
Write
678
VIH VIL VIH VIL X X X X
DQ0-7
DOUT
High Z
High Z
High Z
89H
70H
71H
DIN
DQ8 – 14
High Z
High Z
High Z
High Z
High Z
High Z
High Z
NOTES
1 Refer to DC Characteristics
2 X can be VIL or VIH for control pins and addresses VPPL or VPPH for VPP
3 See DC Characteristics for VPPL VPPH VHH VID voltages
4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1 – A17 e VIL
5 Device ID e 4470H for 28F400BL-T and 4471H for 28F400BL-B
6 Refer to Table 4 for valid DIN during a write operation
7 Command writes for Block Erase or Word Byte Write are only executed when VPP e VPPH
8 To write or erase the boot block hold RP at VHH
9 RP must be at GND g0 2V to meet the 1 2 mA maximum deep power-down current
10 The device ID codes are identical to those of the 28F400BX 5V version and SmartVoltage equivalent
17