M28F010 Datasheet, PDF (1/22 Pages) Intel Corporation – 1024K (128K x 8) CMOS FLASH MEMORY

M28F010
1024K (128K x 8) CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase
5 Second Typical
Y Quick-Pulse Programming Algorithm
10 ms Typical Byte-Program
2 Second Typical Chip-Program
Y Single High Voltage for Writing and
Erasing
Y CMOS Low Power Consumption
30 mA Maximum Active Current
100 mA Maximum Standby Current
Y Command Register Architecture for
Microprocessor Microcontroller
Compatible Write Interface
Y Noise Immunity Features
g10% V_CC Tolerance
Maximum Latch-Up Immunity
through EPI Processing
Y ETOX-III Flash-Memory Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
Y Compatible with JEDEC-Standard
Byte-Wide EPROM Pinouts
Y 10 000 Program Erase Cycles Minimum
Y Available in Three Product Grades
QML ^b55 C to ^a125 C (T_C)
SE2 ^b40 C to ^a125 C (T_C)
SE3 ^b40 C to ^a110 C (T_C)
Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is orga-
nized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also
available in 32-contact leadless chip carrier J-lead and Flatpack surface mount packages It offers the most
cost-effective and reliable alternative for updatable nonvolatile memory The M28F010 adds electrical chip-
erasure and reprogramming to EPROM technology Memory contents of the M28F010 can be erased and
reprogrammed 1) in a socket 2) in a PROM programmer socket 3) on-board during subassembly test 4) in-
system during final test and 5) in-system after-sale
The M28F010 increases memory flexibility while contributing to time- and cost-savings It is targeted for
alterable code- data-storage applications where traditional EEPROM functionality (byte erasure) is either not
required or is not cost-effective Use of the M28F010 is also appropriate where EPROM ultraviolet erasure is
impractical or too time consuming
January 1996
Figure 1 M28F010 Block Diagram
271111 – 1
Order Number 271111-005