28F160S3 Datasheet, PDF(1/52 Page) Intel Corporation – WORD-WIDE FlashFile MEMORY FAMILY

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28F160S3 Datasheet, PDF (1/52 Pages) Intel Corporation – WORD-WIDE FlashFile MEMORY FAMILY

ADVANCE INFORMATION

WORD-WIDE

FlashFileâ¢ MEMORY FAMILY

28F160S3, 28F320S3

Includes Extended Temperature Specifications

n Two 32-Byte Write Buffers

ï£§ 2.7 Âµs per Byte Effective

Programming Time

n Low Voltage Operation

ï£§ 2.7V or 3.3V VCC

ï£§ 2.7V, 3.3V or 5V VPP

n 100 ns Read Access Time (16 Mbit)

110 ns Read Access Time (32 Mbit)

n High-Density Symmetrically-Blocked

Architecture

ï£§ 32 64-Kbyte Erase Blocks (16 Mbit)

ï£§ 64 64-Kbyte Erase Blocks (32 Mbit)

n System Performance Enhancements

ï£§ STS Status Output

n Industry-Standard Packaging

ï£§ ÂµBGA* package, SSOP, and

TSOP (16 Mbit)

ï£§ ÂµBGA* package and SSOP (32 Mbit)

n Cross-Compatible Command Support

ï£§ Intel Standard Command Set

ï£§ Common Flash Interface (CFI)

ï£§ Scaleable Command Set (SCS)

n 100,000 Block Erase Cycles

n Enhanced Data Protection Features

ï£§ Absolute Protection with VPP = GND

ï£§ Flexible Block Locking

ï£§ Block Erase/Program Lockout

during Power Transitions

n Configurable x8 or x16 I/O

n Automation Suspend Options

ï£§ Program Suspend to Read

ï£§ Block Erase Suspend to Program

ï£§ Block Erase Suspend to Read

n ETOXâ¢ V Nonvolatile Flash

Technology

Intelâs Word-Wide FlashFileâ¢ memory family provides high-density, low-cost, non-volatile, read/write storage

solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various

densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended

cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.

Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure

code storage applications, such as networking, where code is either directly executed out of flash or

downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection

with VPP at GND, selective block locking, and program/erase lockout during power transitions. These

alternatives give designers ultimate control of their code security needs.

This family of products is manufactured on Intelâs 0.4 Âµm ETOXâ¢ V process technology. It comes in the

industry-standard 56-lead SSOP and ÂµBGA packages. In addition, the 16-Mb device is available in the

industry-standard 56-lead TSOP package.

June 1997

Order Number: 290608-001

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