28F020 Datasheet, PDF (1/38 Pages) Intel Corporation – 28F020 2048K (256K X 8) CMOS FLASH MEMORY

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28F020 2048K (256K X 8) CMOS
FLASH MEMORY
n Flash Electrical Chip-Erase
 2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
 10 µS Typical Byte-Program
 4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
 90 ns Maximum Access Time
n CMOS Low Power Consumption
 10 mA Typical Active Current
 50 µA Typical Standby Current
 0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n Noise Immunity Features
 ±10% VCC Tolerance
 Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
 EPROM-Compatible Process Base
 High-Volume Manufacturing
Experience
n JEDEC-Standard Pinouts
 32-Pin Plastic Dip
 32-Lead PLCC
 32-Lead TSOP
(See Packaging Spec., Order #231369)
n Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from –1 V to VCC + 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290245-009