IL082 Datasheet, PDF (3/7 Pages) Integral Corp. – Low Power J-FET DUAL OPERATIONAL AMPLIFIERS

IL082
ELECTRICAL CHARACTERISTICS
V_CC = ± 15V, T_AMB = 25°C (unless otherwise specified)
Symbol
V_IO
DV_IO
I_IO
ParametersI
Input Offset Voltage (R_S = 50Ω, V₀=0)
T_amb =25°C
T_min. ≤ T_amb. ≤ T_max.
Input Offset Voltage Drift
Input Offset Current*
T_min. ≤ T_amb. ≤ T_max.
T_amb =25°C
IL082
Min. Typ. Max.
3
10
13
18
Unit
mV
μV/°C
5
100
pA
10
nA
I_IB
Input Bias Current*
T_amb =25°C
T_min. ≤ T_amb. ≤ T_max.
65 400
pA
20
nA
A_VD
SVR
I_CC
V_ICM
Large Signal Voltage Gain (R_L = 2kΩ, V_O =± 10V)
T_amb =25°C
T_min. ≤ T_amb. ≤ T_max.
Supply Voltage Rejection Ratio (R_S = 50Ω, V₀=0)
T_amb =25°C
T_min. ≤ T_amb. ≤ T_max.
Supply Current (Per Amplifier)
T_amb =25°C
T_min. ≤ T_amb. ≤ T_max
Input Common Mode Voltage Range
25 200
15
V/mV
70 86
dB
70
1.4
2.5
mA
2.5
±11 +15
V
-12
CMR
±V_OPP
SR
t_r
K_OV
GBP
Common Mode Rejection Ratio (R_S = 50Ω, V₀=0)
T_amb =25°C
Output Voltage Swing
R_L=2 kΩ
T_amb =25°C R_L=10kΩ
T_min. ≤ T_amb. ≤ T_max.
R_L=2kΩ
R_L=10kΩ
Slew Rate (V_i = 10V, R_L= 2kΩ, C_L = 100pF,
T_amb =25°C, unity gain)
Rise Time (V_i = 20mV, R_L= 2kΩ, C_L =100pF,
T_amb =25°C, unity gain)
Overshoot (V_i = 20mV, R_L= 2kΩ, C_L =100pF,
T_amb =25°C, unity gain)
Gain Bandwidth Product
70 86
10 12
12 13.5
10
12
8
13
0.1
20
3
dB
V
V/μs
μs
%
MHz
R_I
Input Resistance
10¹²
Ω
THD
e_n
Total Harmonic Distortion (f=1kHz, R_L= 2kΩ,
T_amb =25°C)
Equivalent input Noise Voltage
(R_S = 100Ω, f = 1KHz)
0.01
%
18
nV
Hz
V_O1/V_O2 Channel Separation (A_V =100)
120
dB
* The Input bias currents are junction leakage currents which approximately double for every 10⁰C increase in the junction
temperature.