IN74AC257 Datasheet, PDF (2/5 Pages) Integral Corp. – Quad 2-Input Date Selector/Multiplexer with 3-State Outputs High-Speed Silicon-Gate CMOS

IN74AC257
MAXIMUM RATINGS^*
Symbol
Parameter
Value
Unit
V_CC
V_IN
V_OUT
I_IN
I_OUT
I_CC
P_D
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Sink/Source Current, per Pin
DC Supply Current, V_CC and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +7.0
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
±20
mA
±50
mA
±50
mA
750
mW
500
Tstg Storage Temperature
-65 to +150
°C
T_L
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*_{Maximum Ratings are those values beyond which damage to the device may occur.}
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V_CC
V_IN, V_OUT
T_J
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Junction Temperature (PDIP)
T_A
Operating Temperature, All Package Types
I_OH
Output Current - High
I_OL
Output Current - Low
t_r, t_f
Input Rise and Fall Time ^*
(except Schmitt Inputs)
* _{VIN from 30% to 70% VCC}
V_CC =3.0 V
V_CC =4.5 V
V_CC =5.5 V
Min Max Unit
2.0
6.0
V
0
V_CC
V
140
°C
-40
+85
°C
-24
mA
24
mA
0
150
ns/V
0
40
0
25
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V_IN and V_OUT should be constrained to the range
GND≤(V_IN or V_OUT)≤V_CC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V_CC).
Unused outputs must be left open.
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