74HC10E Datasheet, PDF (2/4 Pages) Integral Corp. – TRIPLE 3-INPUT NAND GATE

IN74HC10
MAXIMUM RATINGS^*
Symbol
Parameter
Value
Unit
V_CC DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V_IN DC Input Voltage (Referenced to GND)
-1.5 to V_CC +1.5
V
V_OUT DC Output Voltage (Referenced to GND)
-0.5 to V_CC +0.5
V
I_IN DC Input Current, per Pin
±20
mA
I_OUT DC Output Current, per Pin
±25
mA
I_CC DC Supply Current, V_CC and GND Pins
±50
mA
P_D Power Dissipation in Still Air, Plastic DIP+
750
mW
SOIC Package+
500
Tstg Storage Temperature
-65 to +150
°C
T_L Lead Temperature, 1 mm from Case for 10
260
°C
Seconds
(Plastic DIP or SOIC Package)
*_{Maximum Ratings are those values beyond which damage to the device may occur.}
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
V_CC
DC Supply Voltage (Referenced to GND)
2.0 6.0 V
V_IN, V_OUT DC Input Voltage, Output Voltage (Referenced to 0
V_CC
V
GND)
T_A
Operating Temperature, All Package Types
-55 +125 °C
t_r, t_f
Input Rise and Fall Time (Figure V_CC =4.5 V 0 1000 ns
1)
V_CC =2.0 V 0
500
V_CC =6.0 V
0 400
This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V_IN and
V_OUT should be constrained to the range GND≤(V_IN or V_OUT)≤V_CC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V_CC). Unused outputs must be left open.
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