IWPH01-02 Datasheet, PDF (1/3 Pages) Integral Corp. – SI PIN PHOTODIODE

IWPH01-02
SI PIN PHOTODIODE
Visible to infrared range
Plastic package 7 mm x 7.8 mm
Active area size 2.8 mm x 2.8 mm
Absolute maximum ratings
Parameter
V_{R max}
P _max
T_opr
T_stg
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Max.
35
150
-25 to +85
-40 to +100
Units
V
mW
°C
Electrical and optical characteristics (Ta=25 ºC, unless otherwise noted)
Parameter
Typ
Max
Units
Conditions
λ
Spectral response range
320 to 1100
nm
λ_p
Peak sensitivity wavelength
960
S
Photo sensitivity
0.57
A/W
960 nm
0.38
660 nm
0.46
780 nm
I_sc
Short circuit current
0.48
830 nm
7.5
µA
100 lx
I_D
Dark current
T_CID
Temp. coefficient of I_D
NEP
0.1
10
1.15
1.0x10^-14
nA
times/°C
W/Hz^1/2
V_R=12V
V_R=12V
Package outline (unit: mm, tolerance unless otherwise noted: ±0.1)
7.0±0.2
3.5±0.2
2.7±0.2
active area
Center of
Active
area
2.8x2.8
Inc ident
li ght
0.51+0.14
<0.8 (note 1)
IWPH01-02A
1.4
0.45±0.14
5.08
Korzhenevskogo 12, Minsk, 220108 Republic of
Belarus
Fax: [phone],
Phone: [phone],
1
212 69 16
E-mail: [e-mail]
URL: www.bms.by
1.0
0.51+0.14
<0.8 (note 1)
2.3 ± 0.3
IWPH01-02B