IPW65R065C7 Datasheet, PDF (9/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™C7PowerTransistor
IPW65R065C7
Diagram5:Typ.outputcharacteristics
160
140
120
100
80
60
40
20
0
0
5
10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V
10 V
8V
Diagram6:Typ.outputcharacteristics
100
90
80
7V
70
60
50
40
6V
30
20
5.5 V
5V
10
4.5 V
0
15
20
0
5
10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15
20
Diagram7:Typ.drain-sourceon-stateresistance
0.24
5.5 V
6V
6.5 V
7V
20 V
0.22
10 V
0.20
Diagram8:Drain-sourceon-stateresistance
0.16
0.14
0.12
0.18
0.10
98%
0.16
0.08
typ
0.14
0.06
0.12
0.04
0.10
0
20
40
60
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
0.02
80
100
-50 -25 0 25 50 75 100 125 150
Tj[°C]
RDS(on)=f(Tj);ID=17.1A;VGS=10V
Final Data Sheet
9
Rev.2.0,2013-10-11