IKW50N65H5_15 Datasheet, PDF (9/17 Pages) Infineon Technologies AG – High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode

IKW50N65H5
Highspeedswitchingseriesfifthgeneration
150
135
120 _VGE=20V
105
18V
15V
90
12V
75
10V
60
8V
7V
45
6V
30
5V
15
0
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
150
140
Tj=25°C
Tj=150°C
130
120
110
100
90
80
70
60
50
40
30
20
10
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
2.25
2.00
1.75
IC=12,5A
IC=25A
IC=50A
1000
td(off)
tf
td(on)
tr
100
1.50
1.25
10
1.00
0.75
0.50
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
1
0
30
60
90
120
150
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
9
Rev.2.1,2015-05-06