IKW40N65H5A Datasheet, PDF (9/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW40N65H5A
Highspeedswitchingseriesfifthgeneration
120
Tj = 25°C
Tj = 150°C
100
80
2.50
2.25
2.00
1.75
IC = 5A
IC = 10A
IC = 20A
IC = 40A
60
1.50
1.25
40
1.00
20
0.75
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
0.50
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
1000
td(off)
tf
td(on)
tr
1000
td(off)
tf
td(on)
tr
100
100
10
10
1
0
20
40
60
80
100 120
IC,COLLECTORCURRENT[A]
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
9
Rev.2.1,2014-12-15