BSZ070N08LS5 Datasheet, PDF (9/11 Pages) Infineon Technologies AG – OptiMOSª5 Power-Transistor, 80 V

OptiMOS^ª5Power-Transistor,80V
BSZ070N08LS5
Diagram13:Avalanchecharacteristics
10²
Diagram14:Typ.gatecharge
10
10¹
25 °C
100 °C
125 °C
8
40 V
6
16 V
64 V
4
2
10⁰
10⁰
10¹
10²
tAV[µs]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
0
10³
0
5
10
15
20
25
30
Qgate[nC]
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
90
Gate charge waveforms
85
80
75
70
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2016-08-18