1EBN1001AE_15 Datasheet, PDF (9/23 Pages) Infineon Technologies AG – Single Channel Booster for Inverter Systems

2
Functional Description
EiceDRIVER™ Boost
1EBN1001AE
Functional Description
2.1
Introduction
The 1EBN1001AE is an advanced bipolar single channel IGBT gate driver booster that can also be used for driving
power MOS devices. The device has been developed in order to optimize the design of high performance safety
relevant automotive systems.
The turn-on and turn-off behavior of the IGBT is controlled via 2 pairs of pin: TONI and TOFFI which are connected
to the gate driver, and TONO and TOFFO connected to the gate resistances of the IGBT. The structure of the
output stage is basically that of an emitter-follower circuit, where the voltage at pin TONO (resp. TOFFO) follows
the voltage at pin TONI (resp. TOFFI). The 1EBN1001AE is capable of driving up to 400mm² of IGBT area, with
a typical peak sink and source current capability of 15A.
The active clamping input ACLI allows an external active clamping circuit to turn on the IGBT in case of
overvoltage conditions detected on the IGBT. The active clamping function can be disabled in run time via pin
DACLP.
The input ASC aims at turning on the IGBT in case the system decides to set the motor in Active Short Circuit. An
active ASC signal overrules the inputs signals TONI and TOFFI.
During normal operation, the input of the device TONI and TOFFI are driven with input signals having same
polarity. Driving actively TONI and TOFFI with opposite voltages(e.g. TONI at 15V and TOFFI at -8V) may lead,
depending on the signal configuration, to irreversible damage to the device. It should be ensured at system level
that such case do not happen (e.g. by setting the gate driver in tristate mode).
The internal Short Circuit Protection (SCP) prevents in the device the generation of short circuits in case TONI
and/or TOFFI is floating.
Final Datasheet
9
Hardware Description
Rev. 3.0, 2015-04-30