 English |
|
|
|
|
|
|
|
| SGP06N60 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
| |||
| ◁ |
SGP06N60, SGB06N60
SGD06N60, SGU06N60
25V
20V
120V
480V
15V
10V
5V
0V
0nC
15nC
30nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 6A)
45nC
25µs
1nF
C iss
100pF
C
oss
Crss
10pF
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
100A
20µs
80A
15µs
60A
10µs
40A
5µs
20A
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ⤠600V, Tj = 150°C)
8
Jul-02
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese