ITS4200S-ME-N Datasheet, PDF (8/19 Pages) Infineon Technologies AG – Smart High-Side NMOS-Power Switch

5
Electrical Characteristics
ITS4200S-ME-N
Electrical Characteristics
Table 4
V_S = 13.5V; T_j = 25°C; all voltages with respect to ground, currents flowing into the device un-
less otherwise specified in chapter “Block Diagram and Terms”. Typical values at Vs = 13.5V,
Tj = 25°C
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Powerstage
NMOS ON Resistance
NMOS ON Resistance
Nominal Load Current;
device on PCB ¹⁾
Timings of Power Stages²⁾
R_DSON –
R_DSON –
I_LNOM 0.7
160 200 mΩ I_OUT= 0.5A;
T_j = 25°C;
V_IN= 5V
–
400 mΩ I_OUT= 0.5A;
T_j = 125°C;
V_IN= 5V
–
–
A
T_pin5 = 85°C
5.0.1
5.0.2
5.0.3
Turn ON Time(to 90% of V_out);
L to H transition of V_IN
t_ON
–
60
100 µs V_S=13.5V; R_L = 24Ω 5.0.4
Turn OFF Time (to 10% of V_out); t_OFF
–
H to L transition of V_IN
60
150 µs V_S=13.5V; R_L = 24Ω 5.0.5
ON-Slew Rate (10 to 30% of V_out); SR_ON –
2
4
V /µs V_S=13.5V; R_L = 24Ω 5.0.6
L to H transition of V_IN
OFF-Slew Rate; dV_OUT / dt_ON
(70 to 40% of V_out);
H to L transition of V_IN
SR_OFF –
2
4
V /µs V_S=13.5V; R_L = 24Ω 5.0.7
Under voltage lockout (charge pump start-stop-restart)
Supply undervoltage;
charge pump stop voltage
V_SUV
3.5
–
5.0 V V_S decreasing
5.0.8
Tj = -40°C to 125°C
Supply startup voltage
V_SSU
–
–
6.5 V V_S increasing
5.0.9
Tj = -40°C to 25°C
Supply startup voltage
V_SSU
–
–
7.0 V V_S increasing
Tj = 125°C
5.0.10
Supply startup voltage;
Charge pump restart voltage
V_SSCHP –
5.6 7.0 V V_S increasing
5.0.11
Undervoltage hysteresis;
V_UVHYS=V_SSU-V_SUV
Over voltage lockout
V_UVHYS –
0.3 –
V
5.0.12
Overvoltage shutdown thresthold V_SOV 34
–
42
V V_S decreasing
5.0.13
Tj = -40°C to 125°C
Overvoltage restart thresthold
V_SOVRS 33
–
V V_S decreasing
5.0.14
Tj = -40°C to 125°C
Overvoltage
V_OVHYS –
0.7 –
V
hysteresis;V_OVHYS=V_SOCSD-V_SOVRS
Current consumption
5.0.15
Data Sheet
8
Rev 1.0, 2012-09-01