IPSH4N03LA Datasheet, PDF (8/9 Pages) Infineon Technologies AG – OPTIMOS 2 POWER - TRANSISTOR

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T_j(start)
100
150 °C
100 °C
25 °C
10
IPDH4N03LA G
14 Typ. gate charge
V _GS=f(Q _gate); I _D=45 A pulsed
parameter: V _DD
12
IPSH4N03LA G
15 V
10
5V
20 V
8
6
4
1
1
10
100
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
2
0
1000
0
10
20
30
40
Q _gate [nC]
16 Gate charge waveforms
29
V _GS
28
27
26
25
24
V _{g s(th)}
23
22
21
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _g(th)
Q _gs
Rev. 0.92 - target data sheet
page 8
Q_g
Q _sw
Q _gd
Q _gate
2004-10-27