IPS80R1K4P7 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – 800V CoolMOSª P7 Power Transistor

800VCoolMOSªP7PowerTransistor
IPS80R1K4P7
Diagram9:Typ.transfercharacteristics
10
Diagram10:Typ.gatecharge
10
9
25 °C
9
8
8
7
7
120 V
640 V
6
6
5
5
150 °C
4
4
3
3
2
2
1
1
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
VGS[V]
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
10²
25 °C
125 °C
Diagram12:Avalancheenergy
9
8
7
10¹
6
5
4
10⁰
3
2
1
10^-1
0.0
0.5
1.0
1.5
VSD[V]
IF=f(VSD);parameter:Tj
0
2.0
25
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=0.6A;VDD=50V
Final Data Sheet
8
Rev.2.0,2016-07-05