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| IPL60R180P6 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Very high commutation ruggedness | |||
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5Electricalcharacteristicsdiagrams
600VCoolMOSâ¢P6PowerTransistor
IPL60R180P6
Diagram1:Powerdissipation
200
180
160
140
120
100
Diagram2:Safeoperatingarea
102
101
1 µs
10 µs
100 µs
1 ms
100
10 ms
DC
80
10-1
60
40
10-2
20
0
10-3
0
25
50
75
100
125
150
100
101
102
103
TC[°C]
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
102
101
1 µs
10 µs
100 µs
Diagram4:Max.transientthermalimpedance
101
1 ms
100
100
10 ms
0.5
DC
10-1
10-2
10-3
100
101
102
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
0.2
10-1 0.1
0.05
0.02
0.01
single pulse
10-2
103
10-5
10-4
10-3
10-2
10-1
tp[s]
ZthJC=f(tP);parameter:D=tp/T
Final Data Sheet
8
Rev.2.0,2014-05-16
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