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| IPD60R1K0CE Datasheet, PDF (8/16 Pages) Infineon Technologies AG – Very high commutation ruggedness | |||
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5Electricalcharacteristicsdiagrams
600VCoolMOSâ¢CEPowerTransistor
IPD60R1K0CE,IPU60R1K0CE
Diagram1:Powerdissipation
40
Diagram2:Safeoperatingarea
102
101
1 µs
30
10 µs
100 µs
100
1 ms
10 ms
20
DC
10-1
10
10-2
0
10-3
0
25
50
75
100
125
150
100
101
102
103
TC[°C]
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
102
Diagram4:Max.transientthermalimpedance
101
101
1 µs
0.5
10 µs
100 µs
100 0.2
100
1 ms
0.1
10 ms
DC
10-1
0.05
0.02
10-1 0.01
single pulse
10-2
10-3
100
101
102
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
103
10-5
10-4
10-3
10-2
10-1
tp[s]
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2014-09-25
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