IPB027N10N5 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – N-channel, normal level

OptiMOS^ª5Power-Transistor,100V
IPB027N10N5
Diagram5:Typ.outputcharacteristics
480
7V
440
10 V
6V
400
360
320
280
240
200
160
120
80
40
0
0
1
2
3
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
5.5 V
5V
Diagram6:Typ.drain-sourceonresistance
5
5V
5.5 V
6V
4
3
7V
10 V
2
1
4
5
0
0
100
200
300
400
500
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
400
350
300
250
200
150
100
50
175 °C
25 °C
0
0
2
4
6
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
250
200
150
100
50
0
8
0
40
80
120
160
ID[A]
gfs=f(ID);Tj=25°C
Final Data Sheet
8
Rev.2.1,2015-01-30