IKW75N65EH5_15 Datasheet, PDF (8/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and full-rated diode High speed series fifth generation

IKW75N65EH5
Highspeedseriesfifthgeneration
100
400
350
300
10
250
200
150
1
100
50
not for linear use
0.1
1
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
0
25
50
75
100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
100
300
VGE = 20V
90
270
18V
80
240
15V
12V
70
210
10V
60
180
8V
7V
50
150
6V
40
120
4V
30
90
20
60
10
30
0
25
50
75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.2.1,2015-05-20