IKP08N65H5 Datasheet, PDF (8/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKP08N65H5
Highspeedswitchingseriesfifthgeneration
80
70
10
60
50
tp=1µs
10µs
40
50µs
1
100µs
30
200µs
20
500µs
DC
10
0.1
1
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
0
25
50
75
100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
18
24
16
21 ^VGE=20V
18V
14
18
12V
12
10V
15
8V
10
12
7V
8
6V
9
5V
6
6
4
2
3
0
25
50
75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.1.1,2012-11-09