IHW40N120R3 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ResonantSwitchingSeries
IHW40N120R3
120
110
VGE=20V
100
17V
90
15V
80
13V
70
11V
60
9V
7V
50
5V
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
120
Tj=25°C
110
Tj=175°C
100
90
80
70
60
50
40
30
20
10
0
4 5 6 7 8 9 10 11 12
VGE,GATE-EMITTERVOLTAGE[V]
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
3.0
IC=20A
IC=40A
IC=80A
2.5
1000
td(off)
tf
2.0
100
1.5
1.0
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
10
0
10
20
30
40
50
60
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=7.5Ω,RG(off)=7.5Ω,
dynamic test circuit in Figure E)
8
Rev.2.2,2015-01-26