IGW50N65F5A Datasheet, PDF (8/14 Pages) Infineon Technologies AG – High speed switching series fifth generation

IGW50N65F5A
Highspeedswitchingseriesfifthgeneration
150
Tvj=25°C
135
Tvj=150°C
120
105
90
2.50
2.25
2.00
1.75
IC=6.25A
IC=12.5A
IC=25A
IC=50A
75
1.50
60
1.25
45
1.00
30
0.75
15
0
4
5
6
7
8
9
VGE,GATE-EMITTERVOLTAGE[V]
0.50
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
1000
td(off)
tf
td(on)
tr
1000
td(off)
tf
td(on)
tr
100
100
10
10
1
0
30
60
90
120
150
IC,COLLECTORCURRENT[A]
1
5 15 25 35 45 55 65 75 85
RG,GATERESISTANCE[Ω]
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
Figure 8. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
8
Rev.2.1,2015-01-15