IDK10G65C5_13 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Silicon Carbide Diode

Table 11
Typ. capacitance stored energy
9
8
7
6
5
4
3
2
1
0
0
E_C=f(V_R)
200
400
V_R [V]
5^th Generation thinQ!^TM SiC Schottky Diode
IDK10G65C5
Electrical characteristics diagrams
600
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve
Mathematical Equation
1/R
diff
V
th
V_F=f(I_F)
V_F [V]
V_F  V_TH  R_DIFF  I _F
  V_TH T_j  0.001T_j 1.04 V
    R_DIFF T_j  1.29 10^-6 T_j²  1.29 10^-4 T_j  0.047 
T_j in °C; -55°C < T_j < 175°C; I_F < 20 A
Final Data Sheet
8
Rev. 2.0, 2013-07-20