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IDK06G65C5_13 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Silicon Carbide Diode | |||
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Table 11
Typ. capacitance stored energy
6
5
4
3
2
1
0
0
EC=f(VR)
200
400
VR [V]
5th Generation thinQ!TM SiC Schottky Diode
IDK06G65C5
Electrical characteristics diagrams
600
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve
Mathematical Equation
1/R
diff
V
th
VF=f(IF)
VF [V]
VF ï½ VTH ï« RDIFF ï I F
ï¨ ï© VTH Tj ï½ ï0.001ï Tj ï« 1.04 ïVï
ï¨ ï© ï ï RDIFF Tj ï½ 2.13 ï10-6 ï Tj 2 ï« 2.13 ï10-4 ï Tj ï« 0.077 ï
Tj in °C; -55°C < Tj < 175°C; IF < 12 A
Final Data Sheet
8
Rev. 2.0, 2013-07-20
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