FP35R12W2T4 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
V•Š = ±15 V, I† = 35 A, V†Š = 600 V
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
14
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
12
EÓÒ, TÝÎ = 150°C
EÓËË, TÝÎ = 150°C
10
8
10
ZÚÌœ™ : IGBT
1
6
0,1
4
2
0 _{0 20 40 60 80 100 120 140} 0,010,001
R• [Â]
i:
1
2
34
rÍ[K/W]: 0,058 0,135 0,47 0,537
τÍ[s]: 0,0005 0,005 0,05 0,2
0,01
0,1
1
10
t [s]
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
V•Š = ±15 V, R•ÓËË = 12 Â, TÝÎ = 150°C
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
77
70
I†, Modul
70
I†, Chip
63
56
65
TÝÎ = 25°C
TÝÎ = 125°C
60
TÝÎ = 150°C
55
50
49
45
42
40
35
35
30
28
25
21
20
14
15
10
7
5
0 _{0 200 400 600 800 1000 1200 1400}
V†Š [V]
00,0
0,5
1,0
1,5
2,0
2,5
VΠ[V]
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.2
8